TLP627

TLP627, GaAs IRED & photo-transistor, 60mA, 100mW, 5 V, DIP

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Price:: US $0.48~0.63 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	0.63 / Piece
500 ~ 1000 :	0.54 / Piece
1000 ~ 1500 :	0.48 / Piece

PartNumber:: TLP627

Brand:: Toshiba Semiconductor - Toshiba | D/C: 12+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-09-06

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Part Number:TLP627
US $0.48 - 0.63
TLP627-1

US $0.11 - 0.12 / Piece
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TLP627-2

US $0.40 - 0.53 / Piece
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Product Summary

The TLP627 is a GaAs IRED & photo-transistor. The TLP627 consists of a gallium arsenide infrared emitting diode optically coupled to a darlington connected phototransistor which has an integral base-emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP627 offers two isolated channels in a eight lead plastic DIP. Applications are (1)programmable controllers; (2)DC-output module; (3)telecommunication.

Parametrics

TLP627 absolute maximum ratings: (1)Forward Current IF: 60mA; (2)Power Dissipation (1 Circuit)PD: 100mW; (3)Reverse Voltage VR: 5 V; (4)Junction Temperature Tj: 125 °C; (5)Collector-Emitter Voltage VCEO: 300 V; (6)Emitter -Collector Voltage VECO: 0.3 V; (7)Collector Current IC: 150 mA; (8)Collector Power Dissipation (1 Circuit)PC 150(*300): 100 mW; (9)Junction Temperature Tj: 125 °C; (10)Operating Temperature Range Topr: -55~100 °C; (11)Storage Temperature Range Tstg: -55~125 °C; (12)Lead Soldering Temperature (10s)Tsold: 260(10sec)°C; (13)Total Package Power Dissipation PT: 250mW; (14)Isolation Voltage (AC,1min. , R.H.≤60%)(Note1)BVS: 5000 Vrms.

Features

TLP627 features: (1)Collector-Emitter Voltage : 300V(Min); (2)Current Transfer Ratio : 1000%(Min); (3)Isolation Voltage : 5000Vrms(Min); (4)UL Recognized : UL1577,File No.E67349.